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MJD47T4G Datenblatt(PDF) 3 Page - ON Semiconductor

Teilenummer MJD47T4G
Bauteilbeschribung  High Voltage Power Transistors
PDF  6 Pages
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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MJD47T4G Datenblatt(HTML) 3 Page - ON Semiconductor

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MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G
http://onsemi.com
3
25
25
Figure 1. Power Derating
T, TEMPERATURE (
°C)
0
50
75
100
125
150
20
15
10
5
Figure 2. Switching Time Equivalent Circuit
APPROX
+11 V
RB
-4 V
t1
SCOPE
VCC
RC
51
RB and RC VARIED TO OBTAIN
DESIRED CURRENT LEVELS.
2.5
0
2
1.5
1
0.5
TA TC
TC
DUTY CYCLE
≈ 2%
APPROX -9 V
t1 ≤ 7 ns
10 < t2 < 500 ms
t3 < 15 ns
Vin 0
Cjd << Ceb
Vin
t2
t3
APPROX
+11 V
Vin
TURN-ON PULSE
TA (SURFACE MOUNT)
VEB(off)
TURN-OFF PULSE
TYPICAL CHARACTERISTICS
0.02
IC, COLLECTOR CURRENT (AMPS)
1
0.8
1.4
1.2
0.4
0
0.6
0.2
VBE(sat) @ IC/IB = 5
VBE(on) @ VCE = 4 V
VCE(sat) @ IC/IB = 5
0.02
IC, COLLECTOR CURRENT (AMPS)
2
0.06
0.2
2
40
10
100
VCE = 10 V
TJ = 150°C
60
0.1
0.6
25
°C
-55
°C
20
0.04
0.4
1
200
4
6
Figure 3. DC Current Gain
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
RqJC(t) = r(t) RqJC
RqJC = 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
Figure 4. “On” Voltages
0.7
Figure 5. Thermal Response
0.5
0.1
0.05
0.03
0.02
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.06
0.2
2
0.1
0.6
0.04
0.4
1
0.2
SINGLE PULSE
D = 0.5
0.05
TJ = 25°C
0.1
0.02
0.01



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