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LP2975 Datenblatt(PDF) 17 Page - National Semiconductor (TI) |
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LP2975 Datenblatt(HTML) 17 Page - National Semiconductor (TI) |
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17 / 19 page ![]() Application Hints (Continued) This application can also be improved by adding a feed- forward capacitor. C F will add both a zero fzf and pole fpf to the gain plot (see graph LOW ESR CORRECTED WITH FEED-FORWARD). The crossover frequency f c is now about 10 kHz. If CF is se- lected so that f zf is about 5 kHz, and fpf is about 20 kHz (which means V OUT = 5V), the phase margin will be consid- erably improved. Calculating out all the poles and zeroes, the phase margin is increased from 9˚ to 43˚ (adequate for good stability). EXCESSIVE GATE CAPACITANCE: Higher values of gate capacitance shift the pole f pg to lower frequencies, which can cause stability problems (see previous section GATE CA- PACITANCE POLE FREQUENCY). As shown in the graph fpg vs. CEFF, the pole fpg will likely fall somewhere between 40 kHz and 500 kHz. How much phase shift this adds de- pends on the crossover frequency f c. The effect of gate capacitance becomes most important at high values of ESR for the output capacitor (see graph HIGH ESR UNSTABLE WITHOUT FEED-FORWARD). Higher val- ues of ESR increase f c, which brings fpg more into the posi- tive gain portion of the curve. As f pg moves to a lower fre- quency (corresponding to higher values of gate capacitance), this effect becomes even worse. This points out why FET’s should be selected with the lowest possible gate capacitance: it makes the design more tolerant of higher ESR values on the output capacitor. The use of a feed-forward capacitor C F will help reduce ex- cess phase shift due to f pg, but its effectiveness depends on output voltage (see next section). LOW OUTPUT VOLTAGE AND C F The feed-forward capacitor C F will provide a positive phase shift (lead) which can be used to cancel some of the excess phase lag from any of the various poles present in the loop. However, it is important to note that the effectiveness of C F decreases with output voltage. This is due to the fact that the frequencies of the zero f zf and pole f pf get closer together as the output voltage is reduced (see equations in section FEED-FORWARD COMPENSA- TION). C F is more effective when the pole-zero pair are farther apart, because there is less self cancellation. The net benefit in phase shift provided by C F is the difference between the lead (positive phase shift) from f zf and the lag (negative phase shift) from f pf which is present at the crossover fre- quency f c. As the pole and zero frequency approach each other, that difference diminishes to nothing. The amount of phase lead at f C provided by CF depends both on the f zf/fpf ratio and the location of fz with respect to fc. To illustrate this more clearly, a graph is provided which shows how much phase lead can be obtained for V OUT = 12V, 5V, and 3.3V (see graph PHASE LEAD PROVIDED BY CF). The most important information on the graph is the fre- quency range of f zf which will provide the maximum benefit (most positive phase shift): For V OUT = 12V: 0.1 fc < fz < 1.0 fc For V OUT = 5V: 0.2 fc < fz < 1.2 fc For V OUT = 3.3V: 0.2 fc < fz < 1.3 fc It’s also important to note how the maximum available phase shift that C F can provide drops off with VOUT. At 12V, more than 50˚ can be obtained, but at 3.3V less than 30˚ is pos- sible. The lesson from this is that higher voltage designs are more tolerant of phase shifts from both f pg (the gate capaci- tance pole) and incorrect placement of f z (which means the output capacitor ESR is not at its nominal value). At lower values of V OUT, these parameters must be more precisely selected since C F can not provide as much correction. GENERAL DESIGN PROCEDURE Assuming that V IN,VOUT, and RL are defined: Low ESR Unstable without Feed-Forward DS100034-30 Low ESR Corrected with Feed-Forward DS100034-32 Phase Lead Provided by C F DS100034-33 www.national.com 17 |
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