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HSP061-4F4 Datenblatt(PDF) 2 Page - STMicroelectronics |
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HSP061-4F4 Datenblatt(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() Characteristics HSP061-4F4 2/7 DocID022207 Rev 2 1 Characteristics Table 1. Absolute maximum ratings Tamb = 25 °C Symbol Parameter Value Unit VPP Peak pulse voltage IEC 61000-4-2 contact discharge 8 kV IEC 61000-4-2 air discharge 15 Ipp Repetitive peak pulse current (8/20 µs) 3.5 A Tj Operating junction temperature range -40 to +125 °C Tstg Storage temperature range -65 to +150 °C TL Maximum lead temperature for soldering during 10 s 260 °C Table 2. Electrical characteristics Tamb = 25 °C Symbol Parameter Test conditions Min. Typ. Max. Unit VBR Breakdown voltage IR = 1 mA 6 V IRM Leakage current VRM = 3 V 70 nA VCL Clamping voltage IEC 61000-4-2, +8 kV contact (IPP = 30 A), measured at 30 ns 18 V CI/O - GND Capacitance (input/output to ground) VI/O = 0 V, F = 200 MHz to 3000 MHz, VOSC = 30 mV 0.5 0.55 pF C I/O - GND Capacitance variation (input/output to ground) VI/O = 0 V, F = 200 MHz to 3000 MHz, VOSC = 30 mV 0.03 0.05 pF fC Cut-off frequency -3dB 13 GHz ZDiff Differential impedance tr = 200 ps (10 - 90%) (1) Z0 Diff = 100 85 100 115 1. HDMI specification conditions. This information can be provided for other applications. Please contact your local ST office. |
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