DS_K6F8016U6C datasheet(4/9 Pages) SAMSUNG

4 / 9 page

K6F8016U6C Family

Revision 0.0

May 2003

CMOS SRAM

Preliminary

RECOMMENDED DC OPERATING CONDITIONS1)

Note:

1. TA=-40 to 85

°C, otherwise specified.

2. Overshoot: VCC+2.0V in case of pulse width

≤20ns.

3. Undershoot: -2.0V in case of pulse width

≤20ns.

4. Overshoot and undershoot are sampled, not 100% tested.

Item

Symbol

Min

Typ

Max

Unit

Supply voltage

Vcc

2.7

3.0

3.3

Ground

Vss

Input high voltage

VIH

2.2

Vcc+0.32)

Input low voltage

VIL

-0.33)

0.6

CAPACITANCE1) (f=1MHz, TA=25

°C)

1. Capacitance is sampled, not 100% tested.

Item

Symbol

Test Condition

Min

Max

Unit

Input capacitance

CIN

VIN=0V

Input/Output capacitance

CIO

VIO=0V

DC AND OPERATING CHARACTERISTIC

1. Typical values are measured at VCC=3.0V, TA=25

°C and not 100% tested.

Item

Symbol

Test Conditions

Min

Typ1)

Max

Unit

Input leakage current

ILI

VIN=Vss to Vcc

-1

µA

Output leakage current

ILO

CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or

LB=UB=VIH, VIO=Vss to Vcc

-1

µA

Average operating current

ICC1

Cycle time=1

µs, 100%duty, IIO=0mA, CS1≤0.2V,

≤0.2V or/and UB≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V or

VIN

≥VCC-0.2V

ICC2

Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL,

CS2=VIH, LB=VIL or/and UB=VIL, VIN=VIL or VIH

70ns

55ns

Output low voltage

VOL

IOL = 2.1mA

0.4

Output high voltage

VOH

IOH = -1.0mA

2.4

Standby Current(CMOS)

ISB1

Other input =0~Vcc

1) CS1

≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or

2) 0V

≤CS2≤0.2V(CS2 controlled)

µA

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