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DS_K6F8016U6C Datenblatt(PDF) 6 Page - Samsung semiconductor

Teilenummer DS_K6F8016U6C
Bauteilbeschribung  512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
PDF  9 Pages
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Hersteller  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

DS_K6F8016U6C Datenblatt(HTML) 6 Page - Samsung semiconductor

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K6F8016U6C Family
Revision 0.0
May 2003
6
CMOS SRAM
Preliminary
Address
Data Out
Previous Data Valid
Data Valid
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH, UB or/and LB=VIL)
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Data Valid
High-Z
tRC
CS1
Address
UB, LB
OE
Data out
tAA
tRC
tOH
tOH
tAA
tCO
tBA
tOE
tOLZ
tBLZ
tLZ
tOHZ
tBHZ
tHZ
NOTES (READ CYCLE)
1.
tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
CS2



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