| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Leshan Radio Company |
L2SC3357
|
309Kb/2P
|
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
| Search Partnumber :
Start with "L2SC3357" -
Total : 28 ( 1/2 Page) |
 Leshan Radio Company |
L2SC3356LT1G
|
122Kb/4P |
High-Frequency Amplifier Transistor
|
|
L2SC3356LT1G
|
145Kb/4P |
High Frequency Amplifier Transistor
|
|
L2SC3356LT3G
|
122Kb/4P |
High-Frequency Amplifier Transistor
|
|
L2SC3356RLT1G
|
644Kb/4P |
The L2SC3356RLT1 is an NPN silicon epitaxial transistor designed for
|
|
L2SC3356RLT3G
|
644Kb/4P |
The L2SC3356RLT1 is an NPN silicon epitaxial transistor designed for
|
|
L2SC3356RWT1G
|
653Kb/4P |
The L2SC3356RWT1G is an NPN silicon epitaxial transistor
|
|
L2SC3356RWT3G
|
653Kb/4P |
The L2SC3356RWT1G is an NPN silicon epitaxial transistor
|
|
L2SC3356WT1G
|
151Kb/4P |
High-Frequency Amplifier Transistor
|
|
L2SC3356WT1G
|
173Kb/4P |
High frequency Amplifier Transistor
|
|
L2SC3356WT3G
|
151Kb/4P |
High-Frequency Amplifier Transistor
|
|
L2SC3837DW1T1
|
53Kb/2P |
High-Frequency Amplifier Transistor
|
|
L2SC3837LT1G
|
65Kb/2P |
High-Frequency Amplifier Transistor Small rbb Cc and high gain
|
|
L2SC3837LT1G
|
65Kb/2P |
High-Frequency Amplifier Transistor Small rbb Cc and high gain
|
|
L2SC3837LT1G
|
80Kb/2P |
High frequency Amplifier Transistor
|
|
L2SC3837LT3G
|
65Kb/2P |
High-Frequency Amplifier Transistor Small rbb Cc and high gain
|
|
L2SC3837QLT1G
|
71Kb/2P |
High-Frequency Amplifier Transistor Small rbb Cc and high gain.
|
|
L2SC3837QLT3G
|
71Kb/2P |
High-Frequency Amplifier Transistor Small rbb Cc and high gain.
|
|
L2SC3837T1G
|
87Kb/2P |
High-Frequency Amplifier Transistor Small rbb Cc and high gain
|
|
L2SC3837T3G
|
87Kb/2P |
High-Frequency Amplifier Transistor Small rbb Cc and high gain
|