| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Vishay Siliconix |
VB30100S-E3
|
156Kb/6P
|
High Voltage Trench MOS Barrier Schottky Rectifier
14-Dec-16
|
|
VB30100S-E3
|
213Kb/6P
|
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
18-Jun-2018
|
 Inchange Semiconductor ... |
VB30100S-E3
|
321Kb/2P
|
Schotty Barrier Diode
|
 Vishay Siliconix |
VB30100S-E3-4W
|
149Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier
23-Oct-09
|
|
VB30100S-E3-8W
|
149Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier
23-Oct-09
|
|
VB30100S-E3/4W
|
168Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
31-Jul-08
|
|
VB30100S-E3/4W
|
149Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier
23-Oct-09
|
|
VB30100S-E3/4W
|
156Kb/6P
|
High Voltage Trench MOS Barrier Schottky Rectifier
14-Dec-16
|
|
VB30100S-E3/8W
|
168Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
31-Jul-08
|
|
VB30100S-E3/8W
|
149Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier
23-Oct-09
|
|
VB30100S-E3/8W
|
156Kb/6P
|
High Voltage Trench MOS Barrier Schottky Rectifier
14-Dec-16
|