VB30100S-E3SLASH4W Datenblatt, PDF

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Vishay Siliconix	VB30100S-E3	156Kb/6P	High Voltage Trench MOS Barrier Schottky Rectifier 14-Dec-16
Vishay Siliconix	VB30100S-E3	213Kb/6P	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A 18-Jun-2018
Inchange Semiconductor ...	VB30100S-E3	321Kb/2P	Schotty Barrier Diode
Vishay Siliconix	VB30100S-E3-4W	149Kb/5P	High-Voltage Trench MOS Barrier Schottky Rectifier 23-Oct-09
	VB30100S-E3-8W	149Kb/5P	High-Voltage Trench MOS Barrier Schottky Rectifier 23-Oct-09
	VB30100S-E3/4W	168Kb/5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A 31-Jul-08
	VB30100S-E3/4W	149Kb/5P	High-Voltage Trench MOS Barrier Schottky Rectifier 23-Oct-09
	VB30100S-E3/4W	156Kb/6P	High Voltage Trench MOS Barrier Schottky Rectifier 14-Dec-16
	VB30100S-E3/8W	168Kb/5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A 31-Jul-08
	VB30100S-E3/8W	149Kb/5P	High-Voltage Trench MOS Barrier Schottky Rectifier 23-Oct-09
	VB30100S-E3/8W	156Kb/6P	High Voltage Trench MOS Barrier Schottky Rectifier 14-Dec-16

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