| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Advanced Power Electron... |
AP01L60AT
|
55Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP01L60AT
|
111Kb/5P |
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
|
|
AP01L60H
|
63Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
 VBsemi Electronics Co.,... |
AP01L60H
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
 Advanced Power Electron... |
AP01L60H-H
|
59Kb/4P |
100% Avalanche Rated, Fast Switching Speed
|
 VBsemi Electronics Co.,... |
AP01L60H-H-HF
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
 Advanced Power Electron... |
AP01L60H-HF
|
96Kb/4P |
100% Avalanche Test, Fast Switching Characteristics
|
|
AP01L60H-HF
|
107Kb/5P |
Fast Switching Characteristics
|
 VBsemi Electronics Co.,... |
AP01L60H-HF
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
AP01L60H-HF
|
759Kb/5P |
N-Channel MOSFET uses advanced trench technology
|
 Advanced Power Electron... |
AP01L60H-HF
|
96Kb/4P |
Fast Switching Characteristics
|
|
AP01L60H-HF
|
107Kb/5P |
Fast Switching Characteristics
|
|
AP01L60H-H
|
59Kb/4P |
Fast Switching Speed
|
|
AP01L60H
|
104Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP01L60J
|
63Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP01L60J-H
|
59Kb/4P |
100% Avalanche Rated, Fast Switching Speed
|
|
AP01L60J-HF
|
96Kb/4P |
100% Avalanche Test, Fast Switching Characteristics
|
|
AP01L60J-HF
|
107Kb/5P |
Fast Switching Characteristics
|
|
AP01L60J
|
104Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP01L60T
|
73Kb/4P |
N-CHANNEL ENHANCEMENT MODE
200530031 |