2SC5543 Datenblatt, PDF

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
NEC	2SC5507-T2	91Kb/12P	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
Renesas Technology Corp	2SC5507-T2	300Kb/12P	NPN SILICON RF TRANSISTOR 2004
NEC	2SC5508	106Kb/16P	NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
Renesas Technology Corp	2SC5508	229Kb/10P	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
Renesas Technology Corp	2SC5508-A	229Kb/10P	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
NEC	2SC5508-T2	106Kb/16P	NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
Renesas Technology Corp	2SC5508-T2	229Kb/10P	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
	2SC5508-T2-A	229Kb/10P	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
	2SC5508-T2B	229Kb/10P	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
	2SC5508-T2B-A	229Kb/10P	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
	2SC5508	229Kb/10P	NPN SILICON RF TRANSISTOR
NEC	2SC5509	82Kb/15P	NPN SILICON RF TRANSISTOR
Renesas Technology Corp	2SC5509	231Kb/10P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
California Eastern Labs	2SC5509	1Mb/10P	NPN SILICON RF TRANSISTOR
Renesas Technology Corp	2SC5509-A	231Kb/10P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
NEC	2SC5509-T2	82Kb/15P	NPN SILICON RF TRANSISTOR
Renesas Technology Corp	2SC5509-T2	231Kb/10P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
Renesas Technology Corp	2SC5509-T2-A	231Kb/10P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
Rohm	2SC5511	56Kb/2P	For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A)
Panasonic Semiconductor	2SC5513	35Kb/2P	Silicon NPN triple diffusion mesa type(For horizontal deflection output)

2SC5543 Datenblatt, PDF

2SC5543 Datasheet ,PDF

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