Description
These devices are IGBTs developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new "HB"
series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.

Features
• Designed for soft commutation only
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.55 V (typ.) @ IC = 30 A
• Low VF soft recovery co-packaged diode
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Lead free package

Applications
• Microwave oven
• Resonant converters