| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
International Rectifier |
IRF6610
|
243Kb / 9P |
HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM
|
|
IRFP2410
|
147Kb / 8P |
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon
|
Advanced Power Electron... |
AP01L60AT
|
111Kb / 5P |
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
|
STMicroelectronics |
STL40N10F7
|
851Kb / 15P |
Among the lowest RDS on the market
18-Dec-2015 |
Littelfuse |
PGR-6100
|
2Mb / 1P |
The PGR-6100 combines the features
|
TE Connectivity Ltd |
C-1461401
|
133Kb / 2P |
removed the rib on the base to case
|
Infineon Technologies A... |
AUIRF1018ES
|
664Kb / 10P |
Specifically designed for Automotive applications, this HEXFET짰 Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
2015-11-23 |
First Silicon Co., Ltd |
FTK2304
|
311Kb / 4P |
The FTK2304 uses advanced trench technology to
|
Infineon Technologies A... |
IRF6668PBP
|
636Kb / 10P |
The IRF6668PbF combines the latest HEXFET짰 Power MOSFET
08/28/06 |
|
IRF6715MPBBF
|
282Kb / 9P |
The IRF6715MPbF combines the latest HEXFET짰 Power MOSFET
02/16/11 |
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