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SI7909DN Datenblatt(PDF) 2 Page - Vishay Siliconix

Teilenummer SI7909DN
Bauteilbeschribung  Dual P-Channel 12-V (D-S) MOSFET
PDF  5 Pages
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
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SI7909DN Datenblatt(HTML) 2 Page - Vishay Siliconix

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Document Number: 71996
S-51210–Rev. C, 27-Jun-05
Vishay Siliconix
Si7909DN
New Product
Notes
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
TA = 25°C, unless otherwise noted
SPECIFICATIONS TJ = 25°C, unless otherwise noted
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –700 µA
–0.40
–1.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ±8 V
±100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = –12 V, VGS = 0 V
–1
µA
VDS = –12 V, VGS = 0 V, TJ = 85°C
–5
On-State Drain Currenta
ID(on)
VDS ≤ –5 V, VGS = –4.5 V
–20
A
Drain-Source On-State Resistancea
rDS(on)
VGS = –4.5 V, ID = –7.7 A
0.031
0.037
VGS = –2.5 V, ID = –6.8 A
0.040
0.048
VGS = –1.8 V, ID = –3.0 A
0.057
0.068
Forward Transconductancea
gfs
VDS = –6 V, ID = –7.7 A
17
S
Diode Forward Voltagea
VSD
IS = –2.3 A, VGS = 0 V
–0.7
–1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = –6 V, VGS = –4.5 V, ID = –7.7 A
15.5
24
nC
Gate-Source Charge
Qgs
2.5
Gate-Drain Charge
Qgd
4.3
Turn-On Delay Time
td(on)
VDD = –6 V, RL = 6 Ω
ID ≅ –1 A, VGEN = –4.5 V, RG = 6 Ω
25
40
ns
Rise Time
tr
45
70
Turn-Off DelayTime
td(off)
90
135
Fall Time
tf
85
130
Source-Drain Reverse Recovery Time
trr
IF = –2.3 A, di/dt = 100 A/µs
70
110
Output Characteristics
0
4
8
12
16
20
01234
VGS = 5 thru 2.5 V
1 V
1.5 V
VDS – Drain-to-Source Voltage (V)
2 V
Transfer Characteristics
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
25
˚C
TC = 125˚C
–55
˚C
VGS – Gate-to-Source Voltage (V)



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