SI7909DN datasheet(4/5 Pages) VISHAY

4 / 5 page

www.vishay.com

Document Number: 71996

S-51210–Rev. C, 27-Jun-05

Vishay Siliconix

Si7909DN

New Product

TYPICAL CHARACTERISTICS

TA = 25°C, unless otherwise noted

Threshold Voltage

–0.2

–0.1

0.0

0.1

0.2

0.3

0.4

–50

–25

100

125

150

ID = 700 µA

TJ – Temperature (˚C)

Single Pulse Power, Juncion-To-Ambient

Time (sec)

0.1

600

0.01

0.001

100

Safe Operating Area, Junction-To-Ambient

VDS – Drain-to-Source Voltage (V)

100

0.1

100

0.01

TA = 25˚C

Single Pulse

P(t) = 10

0.1

IDM Limited

ID(on)

Limited

rDS(on) Limited

BVDSS Limited

P(t) = 1

P(t) = 0.1

P(t) = 0.01

P(t) = 0.001

Normalized Thermal Transient Impedance, Junction-to-Ambient

10–3

10–2

600

10–1

10–4

100

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 65˚C/W

3. TJM – TA = PDMZthJA(t)

Notes:

4. Surface Mounted

PDM

SI7909DN Datenblatt(PDF) 4 Page - Vishay Siliconix

SI7909DN Datenblatt(HTML) 4 Page - Vishay Siliconix

Html Pages

1 2 3 4 5

Datenblatt Download

Link URL