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SI7909DN Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI7909DN Datenblatt(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page ![]() Document Number: 71996 S-51210–Rev. C, 27-Jun-05 www.vishay.com 3 Vishay Siliconix Si7909DN New Product TYPICAL CHARACTERISTICS TA = 25°C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.03 0.06 0.09 0.12 VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V 04 8 12 16 20 ID – Drain Current (A) 0 1 2 3 4 5 04 8 12 16 20 VDS = 6 V ID = 7.7 A Qg – Total Gate Charge (nC) VSD – Source-to-Drain Voltage (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150˚C TJ = 25˚C 20 10 1 Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 600 1200 1800 2400 0 246 8 10 12 Crss Coss Ciss VDS – Drain-to-Source Voltage (V) 0.8 0.9 1.0 1.1 1.2 1.3 –50 –25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 7.7 A TJ – Junction Temperature (˚C) 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0 1234 5 VGS – Gate-to-Source Voltage (V) ID = 7.7 A ID = 3 A |
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