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ADRF5025BCCZN-R7 Datenblatt(PDF) 4 Page - Analog Devices

Teilenummer ADRF5025BCCZN-R7
Bauteilbeschribung  Silicon SPDT Switch, Reflective, 9 kHz to 44 GHz
PDF  13 Pages
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Hersteller  AD [Analog Devices]
Direct Link  http://www.analog.com
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ADRF5025BCCZN-R7 Datenblatt(HTML) 4 Page - Analog Devices

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ADRF5025
Data Sheet
Rev. B | Page 4 of 13
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT LINEARITY1
5 MHz to 40 GHz
1 dB Power Compression
P1dB
27.5
dBm
Third-Order Intercept
IP3
Two tone input power = 12 dBm each tone,
Δf = 1 MHz
50
dBm
SUPPLY CURRENT
VDD and VSS pins
Positive Supply Current
IDD
14
µA
Negative Supply Current
ISS
120
µA
DIGITAL CONTROL INPUTS
CTRL pin
Voltage
Low
VINL
0
0.8
V
High
VINH
1.2
3.3
V
Current
Low and High
IINL, IINH
<1
µA
RECOMMENDED OPERATING CONDITONS
Supply Voltage
Positive
VDD
3.15
3.45
V
Negative
VSS
−3.45
−3.15
V
Digital Control Voltage
VCTL
0
VDD
V
RF Input Power2
PIN
f = 5 MHz to 40 GHz, TCASE = 85°C3
Through Path
RF signal is applied to RFC or through
connected RF1/RF2
27
dBm
Hot Switching
RF signal is present at RFC while switching
between RF1 and RF2
27
dBm
Case Temperature
TCASE
−40
+105
°C
1
For input linearity performance over frequency, see Figure 13 to Figure 16.
2
For power derating over frequency, see Figure 2 and Figure 3.
3
For 105°C operation, the power handling degrades from the TCASE = 85°C specification by 3 dB.



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