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ADRF5025BCCZN-R7 Datenblatt(PDF) 1 Page - Analog Devices |
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ADRF5025BCCZN-R7 Datenblatt(HTML) 1 Page - Analog Devices |
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1 / 13 page ![]() Silicon SPDT Switch, Reflective, 9 kHz to 44 GHz Data Sheet ADRF5025 Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibilityisassumedbyAnalogDevicesforitsuse,norforanyinfringementsofpatentsorother rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2018–2020 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com FEATURES Ultrawideband frequency range: 9 kHz to 44 GHz Reflective design Low insertion loss with impedance match 0.9 dB typical to 18 GHz 1.4 dB typical to 40 GHz 1.6 dB typical to 44 GHz Low insertion loss without impedance match 0.9 dB typical to 18 GHz 1.7 dB typical to 40 GHz 2.2 dB typical to 44 GHz High input linearity P1dB: 27.5 dBm typical IP3: 50 dBm typical High RF input power handling Through path: 27 dBm Hot switching: 27 dBm No low frequency spurious RF settling time (50% VCTL to 0.1 dB final RF output): 3.4 µs 12-terminal, 2.25 mm × 2.25 mm LGA package Pin compatible with the ADRF5024 fast switching version APPLICATIONS Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs) FUNCTIONAL BLOCK DIAGRAM ADRF5025 VSS CTRL VDD RFC Figure 1. GENERAL DESCRIPTION The ADRF5025 is a reflective single-pole double-throw (SPDT) switch, manufactured in silicon process. This switch operates from 9 kHz to 44 GHz with better than 1.6 dB of insertion loss and 35 dB of isolation. The ADRF5025 has an radio frequency (RF) input power handling capability of 27 dBm for both the through path and hot switching. The ADRF5025 draws a low current of 14 µA on the positive supply of +3.3 V and 120 µA on negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)- compatible controls. The ADRF5025 is pin compatible with the ADRF5024, low frequency cutoff version, which operates from 100 MHz to 44 GHz. The ADRF5025 RF ports are designed to match a characteristic impedance of 50 Ω. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Electrical Specifications section, Typical Performance Characteristics section, and Applications Information section for more details. The ADRF5025 comes in a 2.25 mm × 2.25 mm, 12-terminal, RoHS-compliant, land grid array (LGA) package and can operate from −40°C to +105°C. |
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