Data Sheet

ADRF5547

Rev. A | Page 3 of 15

SPECIFICATIONS

ELECTRICAL SPECIFICATIONS

VDD1-ChA, VDD1-ChB, VDD2-ChA, VDD2-ChB, and SWVDD-ChAB = 5 V, SWCTRL-ChAB = 0 V or SWVDD-ChAB, BP-ChA =

noted.

Table 1

Parameter

Test Conditions/Comments

Min

Typ

Max

Unit

FREQUENCY RANGE

3.7

5.3

GHz

GAIN1

Receive operation at 4.6 GHz

High Gain Mode

33

dB

Low Gain Mode

18

dB

GAIN FLATNESS1

Receive operation in any 100 MHz bandwidth

High Gain Mode

0.6

dB

Low Gain Mode

0.2

dB

NOISE FIGURE1

Receive operation at 4.6 GHz

High Gain Mode

1.6

dB

Low Gain Mode

1.6

dB

OUTPUT THIRD ORDER INTERCEPT POINT

(OIP3)1

Receive operation, two-tone output power = 8 dBm

per tone at 1 MHz tone spacing

High Gain Mode

31

dBm

Low Gain Mode

22

dBm

OUTPUT 1 dB COMPRESSION (OP1dB)

High Gain Mode

18

dBm

Low Gain Mode

6

dBm

INSERTION LOSS1

Transmit operation at 4.6 GHz

0.50

dB

CHANNEL TO CHANNEL ISOLATION1

At 4.6 GHz

Between RxOUT-ChA and RxOUT-ChB

Receive operation

45

dB

Between TERM-ChA and TERM-ChB

Transmit operation

53

dB

SWITCH ISOLATION1

ANT-ChA to TERM-ChA and ANT-ChB to

TERM-ChB

Transmit operation, PD-ChAB = 0 V

20

dB

50% control voltage to 90%, 10% of RxOUT-ChA or

RxOUT-ChB in receive operation

860

ns

50% control voltage to 90%, 10% of TERM-ChA or

TERM-ChB in transmit operation

800

ns

RF INPUT POWER AT ANT-CHA, ANT-CHB1

Receive operation, LTE average (9 dB PAR)

15

dBm

RECOMMENDED OPERATING CONDITIONS

Bias Voltage Range

VDD1-ChA, VDD1-ChB, VDD2-ChA, VDD2-ChB,

SWVDD-ChAB

4.75

5

5.25

V

Control Voltage Range2

SWCTRL-ChAB, BP-ChA, BP-ChB, PD-ChAB

0

V

RF Input Power at ANT-ChA, ANT-ChB

SWCTRL-ChAB = 5 V, BP-ChA = BP-ChB = 0 V, PD-

Continuous wave

40

dBm

9 dB PAR LTE full lifetime average

40

dBm

9 dB PAR LTE single event (<10 sec) average

43

dBm

Case Temperature Range (TCASE)3

−40

+105

°C

Junction Temperature at Maximum TCASE1, 3

Receive operation

132

°C

Transmit operation

134

°C