Dual-Channel, 3.7 GHz to 5.3 GHz,

Receiver Front End

Data Sheet

ADRF5547

Rev. A

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FEATURES

Integrated dual-channel RF front end

2-stage LNA and high power SPDT switch

On-chip bias and matching

Single-supply operation

Gain

High gain mode: 33 dB typical at 4.6 GHz

Low gain mode: 18 dB typical at 4.6 GHz

Low noise figure

High gain mode: 1.6 dB typical at 4.6 GHz

Low gain mode: 1.6 dB typical at 4.6 GHz

High channel to channel isolation

Between RxOUT-ChA and RxOUT-ChB: 45 dB typical

Between TERM-ChA and TERM-ChB: 53 dB typical

Low insertion loss: 0.50 dB typical at 4.6 GHz

Full lifetime

LTE average power (9 dB PAR): 40 dBm

Single event (<10 sec operation)

LTE average power (9 dB PAR): 43 dBm

High OIP3: 31 dBm typical

Power-down mode and low gain mode for LNA

Low supply current

High gain mode: 86 mA typical at 5 V

Low gain mode: 36 mA typical at 5 V

Power-down mode: 12 mA typical at 5 V

Positive logic control

40-lead, 6 mm × 6 mm LFCSP

APPLICATIONS

Wireless infrastructure

TDD massive multiple input and multiple output (MIMO) and

active antenna systems

TDD-based communication systems

GENERAL DESCRIPTION

The ADRF5547 is a dual-channel, integrated RF, front end

multichip module designed for time division duplexing (TDD)

applications that operates from 3.7 GHz to 5.3 GHz. The

ADRF5547 is configured in dual channels with a cascading

two-stage low noise amplifier (LNA) and a high power silicon,

single-pole, double-throw (SPDT) switch.

In high gain mode, the cascaded, two-stage LNA and switch

offer a low noise figure of 1.6 dB and high gain of 33 dB at

4.6 GHz with an output third order intercept point (OIP3) of

31 dBm (typical).

FUNCTIONAL BLOCK DIAGRAM

1

GND

2

GND

3

ANT-ChA

4

GND

5

SWCTRL-ChAB

6

SWVDD-ChAB

7

GND

8

ANT-ChB

9

GND

10

GND

23 GND

24 BP-ChB

25 NIC

26 PD-ChAB

27 BP-ChA

28 GND

29 RxOUT-ChA

30 GND

22 RxOUT-ChB

21 GND

ADRF5547

Figure 1.

In low gain mode, one stage of the two-stage LNAs is in bypass,

providing 18 dB gain at lower current of 36 mA. In power-down

mode, the LNAs are turned off and the device draws 12 mA.

In transmit operation, when RF inputs are connected to a

termination pin (TERM-ChA or TERM-ChB), the switch

provides a low insertion loss of 0.50 dB and handles long term

evolution (LTE) average power (9 dB peak to average ratio

(PAR)) of 40 dBm for full lifetime operation and 43 dBm for

single event (<10 sec) LNA protection operation.

The device comes in an RoHS compliant, compact, 40-lead,

6 mm × 6 mm LFCSP.