AND9068/D

http://onsemi.com

5

This is the amount of change in collector current for an

incremental change in the gate to emitter voltage, measured

in Siemens (or Mhos). It is specified at the room temperature

rated current of the device, and typically with the device in

full saturation, where a further increase in collector−emitter

voltage no longer leads to an additional increase in collector

current. A typical collector−emitter voltage used for this test

Dynamic Characteristics

Table 4. IGBT Dynamic Electrical Characteristics

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

DYNAMIC CHARACTERISTIC

Input capacitance

−

2600

−

pF

Output capacitance

−

64

−

Reverse transfer capacitance

−

42

−

Gate charge total

80

nC

Gate to emitter charge

24

Gate to collector charge

33

The dynamic electrical characteristics which include

device capacitances and gate charge are given in the

electrical table, as shown in Table 4.

IGBT capacitances are similar to those described for

power MOSFETs. The datasheet describes the measurable

specified in the electrical table at a fixed collector bias

voltage; however, the capacitances are voltage dependant,

as can be seen in Figure 6. The capacitances specified on the

datasheet are convenient and easily measured. They relate to

the pin to pin capacitances shown in Figure 7 and described

below.

f = 1 MHz

10000

1000

100

10

0

10

20

30

100

40

60

80

90

70

50

Figure 6. IGBT Capacitance versus Collector−Emitter