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NGTP25P140FST4G Datenblatt(PDF) 8 Page - ON Semiconductor

Teilenummer NGTP25P140FST4G
Bauteilbeschribung  Reading ON Semiconductor IGBT Datasheets
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begins to rise from VCE(sat) as the charge due to current flow
is removed. The voltage across the device reaches the supply
voltage, and minority carriers that remain in the device after
turn−off cause a tail current that continues to flow. This is
illustrated in Figure 10.
The switching characteristics are given in the electrical
parametric table for TJ = 25 and 150°C. These are shown in
Table 5.
Table 5. INDUCTIVE SWITCHING ELECTRICAL CHARACTERISTICS OF THE IGBT
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTIC , INDUCTIVE LOAD
Turn−on delay time
TJ = 25°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V
td(on)
78
ns
Rise time
tr
30
Turn−off delay time
td(off)
130
Fall time
tf
120
Turn−on switching loss
Eon
0.900
mJ
Turn−off switching loss
Eoff
0.300
Total switching loss
Ets
1.200
Turn−on delay time
TJ = 150°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V
td(on)
76
ns
Rise time
tr
33
Turn−off delay time
td(off)
133
Fall time
tf
223
Turn−on switching loss
Eon
1.10
mJ
Turn−off switching loss
Eoff
0.510
Total switching loss
Ets
1.610
Figure 9. Turn−on Switching Illustration Showing the
Definitions of the Turn−on Switching Characteristics
Turn−on Delay Time, td(on)
td(on) is the time delay between the rising edge of the gate
pulse and the rising edge of the IGBT collector current. The
measurement considers the point at which both the gate
voltage and collector current reach 10% of their final
specified value.
Rise Time, tr
The interval between the time the collector reaches 10%
of its specified current value and the time it reaches 90% of
its final value is defined as the rise time.
Turn−on Switching Loss, Eon
The turn−on switching losses are calculated by integrating
the power dissipation (IC x VCE) over the time interval
starting when the collector current reaches 10% of its final
value and ending when the collector−emitter voltage reaches
5% of its peak value.
Turn−off Delay Time, td(off)
td(off) is the time delay between the falling edge of the gate
pulse and the falling edge of the collector current. The
measurement is the time between the point at which the gate
voltage falls to 90% of its maximum value and the collector
current reaches 10% of its final specified value.
Fall Time, tf
The fall time is defined as the time required for the
collector current to drop from 90% to 10% of its initial value.
Turn−off Switching Loss, Eoff
The turn−off switching energy losses are calculated to
include the overlap of the rising collector−emitter voltage



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