SIR5802DP datasheet(4/9 Pages) VISHAY

4 / 9 page

SIR5802DP

www.vishay.com

Vishay Siliconix

S21-0369-Rev. B, 19-Apr-2021

Document Number: 63057

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area, Junction-to-Ambient

Note

a. VGS > minimum VGS at which RDS(on) is specified

100

1000

10000

0.01

0.1

100

0.2

0.4

0.6

0.8

1.0

1.2

Axis Title

SD - Source-to-Drain Voltage (V)

J = 150 °C

J = 25 °C

100

1000

10000

0.003

0.006

0.009

0.012

0.015

5.2

6.4

7.6

8.8

Axis Title

GS - Gate-to-Source Voltage (V)

J = 125 °C

J = 25 °C

D = 20 A

100

1000

10000

-1.2

-0.9

-0.6

-0.3

0.3

0.6

-50

-25

100

125

150

Axis Title

J - Junction Temperature (°C)

D = 5 mA

D = 250 μA

100

1000

10000

100

200

300

400

500

0.001

0.01

0.1

Axis Title

t - Time (s)

100

1000

10000

0.01

0.1

100

1000

0.01

0.1

100

Axis Title

DS - Drain-to-Source Voltage (V)

DM limited

A = 25 °C,

single pulse

Limited by R

DS(on)

BVDSS limited

10 ms

100 ms

1 ms

100 μs

D limited

10s

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