SIR5802DP datasheet(1/9 Pages) VISHAY

Teilenummer	SIR5802DP

Bauteilbeschribung	N-Channel 80 V (D-S) MOSFET

PDF	9 Pages

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Hersteller	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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SIR5802DP

www.vishay.com

Vishay Siliconix

S21-0369-Rev. B, 19-Apr-2021

1

Document Number: 63057

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 80 V (D-S) MOSFET

FEATURES

• TrenchFET® Gen V power MOSFET

• Ultra-low RDS x Qg FOM product

• Optimized Qgd/Qgs ratio

• Excellent

efficiency

performance

in

power supplies

• 100 % Rg and UIS tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Synchronous rectification

• Primary side switch

• OR-ing and hot swap switch

• Motor drive control

• Battery management

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 54 °C/W

g. TC = 25 °C

PRODUCT SUMMARY

VDS (V)

80

RDS(on) max. (

Ω) at VGS = 10 V

0.0029

RDS(on) max. (

Ω) at VGS = 7.5 V

0.0040

Qg typ. (nC)

28

ID (A)

137.5

Configuration

Single

PowerPAK® SO-8 Single

Top View

1

6.15

mm

5.15

mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

N-Channel MOSFET

G

D

S

ORDERING INFORMATION

Package

PowerPAK SO-8

Lead (Pb)-free and halogen-free

SIR5802DP-T1-RE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

VDS

80

V

Gate-source voltage

VGS

± 20

Continuous drain current (TJ = 150 °C)

TC = 25 °C

ID

137.5

A

TC = 70 °C

110

TA = 25 °C

33.6 b, c

TA = 70 °C

26.9 b, c

Pulsed drain current (t = 100 μs)

IDM

300

Continuous source-drain diode current

TC = 25 °C

IS

94.5 a

TA = 25 °C

5.6 b, c

Single pulse avalanche current

L = 0.1 mH

IAS

45

Single pulse avalanche energy

EAS

101.2

mJ

Maximum power dissipation

TC = 25 °C

PD

104

W

TC = 70 °C

66.6

TA = 25 °C

6.25 b, c

TA = 70 °C

4 b, c

Operating junction and storage temperature range

TJ, Tstg

-55 to +150

°C

Soldering recommendations (peak temperature) c

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient b

t

≤ 10 s

RthJA

15

20

°C/W

Maximum junction-to-case (drain)

Steady state

RthJC

0.9

1.2

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