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SIR5802DP Datenblatt(PDF) 3 Page - Vishay Siliconix

Teilenummer SIR5802DP
Bauteilbeschribung  N-Channel 80 V (D-S) MOSFET
PDF  9 Pages
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIR5802DP Datenblatt(HTML) 3 Page - Vishay Siliconix

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SIR5802DP
www.vishay.com
Vishay Siliconix
S21-0369-Rev. B, 19-Apr-2021
3
Document Number: 63057
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
10
100
1000
10000
0
40
80
120
160
200
0
1.0
2.0
3.0
4.0
5.0
Axis Title
V
DS - Drain-to-Source Voltage (V)
V
GS = 10 V thru 7 V
V
GS = 6 V
V
GS = 5 V
V
GS = 4 V thru 0 V
10
100
1000
10000
0.0020
0.0023
0.0026
0.0029
0.0032
0.0035
0
20406080
100
Axis Title
I
D - Drain Current (A)
V
GS = 7.5 V
V
GS = 10 V
10
100
1000
10000
0
2
4
6
8
10
0
8
16
24
32
40
Axis Title
Q
g - Total Gate Charge (nC)
I
D = 20 A
V
DS = 20 V, 40 V, 60 V
10
100
1000
10000
0
50
100
150
200
250
02468
10
Axis Title
V
GS - Gate-to-Source Voltage (V)
T
C = 25 °C
T
C = -55 °C
T
C = 125 °C
10
100
1000
10000
1
10
100
1000
10 000
0
1632486480
Axis Title
V
DS - Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
10
100
1000
10000
0.5
0.8
1.1
1.4
1.7
2.0
-50
-25
0
25
50
75
100
125
150
Axis Title
T
J - Junction Temperature (°C)
V
GS = 7.5 V, 20 A
V
GS = 10 V, 20 A



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