P25Q80H datasheet(9/70 Pages) PUYA

Teilenummer	P25Q80H

Bauteilbeschribung	Ultra Low Power, 8M-bit Serial Multi I/O Flash Memory Datasheet

PDF	70 Pages

Scroll/Zoom	100%

Hersteller	PUYA [Puya Semiconductor Co., Ltd.]

Direct Link	http://www.puyasemi.com/index_en.html

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9 / 70 page

P25Q80H Datasheet

Puya Semiconductor

Page 9 of 70

5.2

DC Characteristics

Table 5-2-a DC parameters(Ta=-40°C to +85°C)

Sym.

Parameter

Conditions

2.3V to 3.6V

Units

Min.

Typ.

Max.

IDPD

Deep power down

current

CS#=Vcc, all other inputs at 0V

or Vcc

0.6

1.5

ISB

Standby current

CS#, HOLD#, WP#=VIH all inputs

at CMOS levels

ICC1

Low power read

current (03h)

f=1MHz; IOUT=0mA

2.0

3.0

f=33MHz; IOUT=0mA

2.0

4.0

ICC2

Read current (0Bh)

f=50MHz; IOUT=0mA

2.5

4.0

f=85MHz; IOUT=0mA

2.5

4.5

ICC3

Program current

CS#=Vcc

3.0

5.0

ICC4

Erase current

CS#=Vcc

3.0

5.0

ILI

Input load current

All inputs at CMOS level

1.0

ILO

Output leakage

All inputs at CMOS level

1.0

VIL

Input low voltage

0.3Vcc

VIH

Input high voltage

0.7Vcc

VOL

Output low voltage

IOL=100uA

0.2

VOH

Output high voltage

IOH=-100uA

Vcc-0.2

Note

1. Typical values measured at 3.0V @ 25°C

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