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P25Q80H Datenblatt(PDF) 4 Page - Puya Semiconductor Co., Ltd.

Teilenummer P25Q80H
Bauteilbeschribung  Ultra Low Power, 8M-bit Serial Multi I/O Flash Memory Datasheet
PDF  70 Pages
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Hersteller  PUYA [Puya Semiconductor Co., Ltd.]
Direct Link  http://www.puyasemi.com/index_en.html
Logo PUYA - Puya Semiconductor Co., Ltd.

P25Q80H Datenblatt(HTML) 4 Page - Puya Semiconductor Co., Ltd.

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P25Q80H Datasheet
Puya Semiconductor
Page 4 of 70
1
Overview
General
 Single 2.3V to 3.60V supply
 Industrial Temperature Range -40C to 85C
 Serial Peripheral Interface (SPI) Compatible: Mode 0 and Mode 3
 Single, Dual and Quad IO mode
-
8M x 1 bit
-
4M x 2 bits
-
2M x 4 bits
Flexible Architecture for Code and Data Storage
-
Uniform 256-byte
Page Program
-
Uniform 256-byte
Page Erase
-
Uniform 4K-byte
Sector Erase
-
Uniform 32K/64K-byte Block Erase
-
Full Chip Erase
Hardware Controlled Locking of Protected Sectors by WP Pin
One Time Programmable (OTP) Security Register
-
3*512-Byte Security Registers With OTP Lock
128 bit unique ID for each device
Fast Program and Erase Speed
-
2ms
Page program time
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8ms
Page erase time
-
8ms
4K-byte sector erase time
-
8ms
32K-byte block erase time
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8ms
64K-byte block erase time
JEDEC Standard Manufacturer and Device ID Read Methodology
Ultra Low Power Consumption
-
0.6uA
Deep Power Down current
-
9uA
Standby current
-
2.0mA
Active Read current at 33MHz
-
3.0mA
Active Program or Erase current
High Reliability
-
100,000 Program / Erase Cycles
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20-year Data Retention
Industry Standard Green Package Options
-
8-pin
SOP (150mil/208mil)
-
8-land
USON (3x2x0.55mm/3x2x0.45mm/3x4x0.55mm)
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8-land
WSON (6x5x0.75mmmm)
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8-pin
TSSOP
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KGD for SiP



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