P25Q80H datasheet(5/70 Pages) PUYA

5 / 70 page

P25Q80H Datasheet

Puya Semiconductor

Page 5 of 70

Description

The P25Q80H is a serial interface Flash memory device designed for use in a wide variety of high-volume

consumer based applications in which program code is shadowed from Flash memory into embedded or

external RAM for execution. The flexible erase architecture of the device, with its page erase granularity it is

ideal for data storage as well, eliminating the need for additional data storage devices.

The erase block sizes of the device have been optimized to meet the needs of today's code and data storage

applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently.

Because certain code modules and data storage segments must reside by themselves in their own erase

regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash

memory devices can be greatly reduced. This increased memory space efficiency allows additional code

routines and data storage segments to be added while still maintaining the same overall device density.

The device also contains an additional 3*512-byte security registers with OTP lock (One-Time

Programmable)

, can be used for purposes such as unique device serialization, system-level Electronic Serial

Number (ESN) storage, locked key storage, etc.

Specifically designed for use in many different systems, the device supports read, program, and erase

operations with a wide supply voltage range of 2.3V to 3.6V. No separate voltage is required for programming

and erasing.

P25Q80H Datenblatt(PDF) 5 Page - Puya Semiconductor Co., Ltd.