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BST120 Datenblatt(PDF) 5 Page - NXP Semiconductors |
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BST120 Datenblatt(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page ![]() April 1995 5 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BST120 Fig.2 Switching times test circuit. handbook, halfpage MBB689 50 Ω VDD = −50 V ID 0 V −10 V Fig.3 Input and output waveforms. handbook, halfpage MBB690 10 % 90 % 90 % 10 % ton toff OUTPUT INPUT Fig.4 Drain current vs ON-resistance; Tj =25 °C; typical values. handbook, halfpage 16 4 8 6 ID (mA) RDSon (Ω) 10 12 14 −103 −102 −10 MDA776 VGS = −10 V −7.5 V −6 V −5 V −4.5 V Fig.5 Transfer characteristics; Tj =25 °C; −VDS = 10 V; typical values. handbook, halfpage 0 −10 −1 0 −0.2 −0.4 −0.6 −0.8 −2 −4 −6 ID (A) −8 MDA777 VGS (V) |
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