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B2D30120HC1 Datenblatt(PDF) 2 Page - BASIC SEMICONDUCTOR |
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B2D30120HC1 Datenblatt(HTML) 2 Page - BASIC SEMICONDUCTOR |
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2 / 7 page ![]() B2D30120HC1 SiC Schottky Diode 2 / 7 www.basicsemi.com Maximum Ratings (T C=25°C unless otherwise specified) Thermal Characteristics Symbol Parameter Value Unit Symbol Parameter Test conditions Unit Value V RRM V RSM I F I FSM ∫i 2dt P tot T j T stg Repetitive peak reverse voltage Non-repetitive peak reverse voltage Continuous forward current Non-repetitive forward surge current i2t value Power dissipation Operating junction temperature Storage temperature TO-247 mounting torque M3 Screw T C=25°C T C=155°C T C=25°C T C=110°C T C=25°C, tp=10ms T C=25°C, tp=10ms, Half sine wave T C=110°C, tp=10ms, Half sine wave 1200 1200 115* 107* 66* 54*/108** 15*/30** 220* 95* -55~175 -55~175 0.7 V V A A A2S W °C °C Nm Min. Typ. Max. 0.68*/ 0.34** K/W Thermal resistance from junction to case R th(jc) * Per Leg, ** Per Device * Per Leg, ** Per Device Rev. 1.2 |
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