B2D30120HC1 datasheet(1/7 Pages) BASICSEMI

Teilenummer	B2D30120HC1

Bauteilbeschribung	SiC Schottky Diode

PDF	7 Pages

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Hersteller	BASICSEMI [BASIC SEMICONDUCTOR]

Direct Link	https://www.basicsemi.com/

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backside

3

1

B2D30120HC1

SiC Schottky Diode

V

RRM

1200 V

30 A**

178 nC**

I

F (TC=155°C)

Q

C

Package: TO-247-3

Product Summary

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1

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Electrical Connection

Features



Benefits

Low leakage current (I

R)

Zero reverse recovery current

Temperature independent switching behavior

Positive temperature coefficient on V

F

High surge current capacity



Low capacitive charge



System cost savings due to smaller magnetics

System efficiency improvement over Si diodes

Reduction of heat sink requirements



Switch mode power supplies (SMPS)

Uninterruptible power supplies



Server/telecom power supplies

Power factor correction



Solar

Enabling higher frequency

Reduced EMI

Applications



Pin1 - Anode

Pin2 and backside - Cathode



Pin3 - Anode

Package Pin Definitions

Package Parameters

Part Number

Marking

Package

B2D30120HC1

TO-247-3

* Per Leg, ** Per Device

Rev. 1.2

Ähnliche Beschreibung - B2D30120HC1

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