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B2D30120HC1 Datenblatt(PDF) 4 Page - BASIC SEMICONDUCTOR |
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B2D30120HC1 Datenblatt(HTML) 4 Page - BASIC SEMICONDUCTOR |
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4 / 7 page ![]() B2D30120HC1 SiC Schottky Diode 4 / 7 www.basicsemi.com Typical Performance (Per Leg) Typical forward characteristics Figure 1 Figure 3 Figure 2 Figure 4 Diode forward current as function of temperature, D=duty cycle Typical capacitance as function of reverse voltage, C=f(V R); Tj=25°C; f =1 MHz Typical reverse current as function of reverse voltage 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 175℃ 150℃ 100℃ 25℃ VF (V) 0 200 400 600 800 1000 1200 1400 0.001 0.01 0.1 1 10 100 175℃ 100℃ 25℃ 150℃ VR (V) 25 50 75 100 125 150 175 0 50 100 150 200 D=1 D=0.7 D=0.5 D=0.3 D=0.2 D=0.1 0.1 1 10 100 1000 0 200 400 600 800 1000 1200 1400 VR (V) T C(°C) Rev. 1.2 |
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