NXP Semiconductors

A5M20TG042

Airfast Power Amplifier Module

A5M20TG042

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Product data sheet

Rev. 1 — 20 May 2024

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6 Ordering information

Table 3. Ordering information

Device

Tape and reel information

Package

A5M20TG042T1

T1 suffix = 1,000 units, 32 mm tape width, 13-inch reel

20 mm × 16 mm Module

7 Product marking

Figure 3. Product marking

Table 4. Product marking trace code

Identifier

Description

A

Assembly location

WL

Wafer lot indicator

YYWW

Date code

Z

Assembly lot

8 Limiting values

Table 5. Limiting values

Rating

Symbol

Value

Unit

Stage 1 and stage 2 gate-bias voltage range

VG1, VG2

–0.5 to +5

Vdc

Stage 1 and stage 2 operating voltage range

VD1, VD2

24 to 32

Vdc

Stage 3 gate-bias voltage range

VG3A, VG3B

–8 to 0

Vdc

Stage 3 operating voltage range

VD3A, VD3B

44 to 52

Vdc

Maximum forward gate current, IG (A+B), @ TC = 25°C

IGMAX

17.0

mA

Storage temperature range

Tstg

–65 to +150

°C

Case operating temperature

TC

125

°C

Peak input power

(2000 MHz, pulsed CW, 10 µsec(on), 10% duty cycle)

Pin

11.0

dBm