NXP Semiconductors

A5M20TG042

Airfast Power Amplifier Module

A5M20TG042

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Product data sheet

Rev. 1 — 20 May 2024

6 / 21

13 Electrical characteristics

13.1 DC characteristics — off characteristics

Table 10. DC characteristics — off characteristics

(TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

GaN stage 3 carrier — off characteristics

Off-state drain leakage

(VDS = 150 Vdc, VGS = –8 Vdc)

ID(BR)

—

—

4.0

mAdc

Off-state gate leakage

(VDS = 48 Vdc, VGS = –8 Vdc)

IGLK

–4.0

—

—

mAdc

GaN stage 3 peaking — off characteristics

Off-state drain leakage

(VDS = 150 Vdc, VGS = –8 Vdc)

ID(BR)

—

—

5.5

mAdc

Off-state gate leakage

(VDS = 48 Vdc, VGS = –8 Vdc)

IGLK

–5.5

—

—

mAdc

13.2 DC characteristics — on characteristics

Table 11. DC characteristics — on characteristics

(TA = 25°C unless otherwise noted)

Characteristic

Symbol

Typ

Range

Unit

LDMOS stage 1 — on characteristics

Gate threshold voltage

(VDS1 = 10 Vdc, ID1 = 2.4 μAdc)

VGS1(th)

1.3

±0.4

Vdc

Gate quiescent voltage

(VDS1 = 28 Vdc, IDQ1 = 25 mAdc, measured in production test fixture)

VGS1(Q)

2.0

±0.4

Vdc

LDMOS stage 2 — on characteristics

Gate threshold voltage

(VGS2 = 10 Vdc, ID2 = 12.8 μAdc)

VGS2(th)

1.3

±0.4

Vdc

Gate quiescent voltage

(VDS2 = 28 Vdc, IDQ2 = 65 mAdc, measured in production test fixture)

VGS2(Q)

1.9

±0.4

Vdc

GaN stage 3 carrier — on characteristics

Gate threshold voltage

(VGS3A = 10 Vdc, ID3A = 10 mAdc)

VGS3A(th)

–2.8

±1.0

Vdc

Gate quiescent voltage

(VDS3A = 45 Vdc, IDQ3A = 75 mAdc, measured in production test fixture)

VGS3A(Q)

–2.6

±1.0

Vdc

GaN stage 3 peaking — on characteristics

Gate threshold voltage

(VGS3B = 10 Vdc, ID3B = 10 mAdc)

VGS3B(th)

–2.8

±1.0

Vdc

Gate quiescent voltage

(VDS3B = 45 Vdc, IDQ3B = 0 mAdc, measured in production test fixture)

VGS3B(Q)

–2.7

±1.0

Vdc