NXP Semiconductors

A5M20TG042

Airfast Power Amplifier Module

A5M20TG042

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Product data sheet

Rev. 1 — 20 May 2024

8 / 21

13.5 Typical performance

Table 15. Typical performance

(In NXP reference circuit, TA = 25°C unless otherwise noted)[1] VD1 + VD2 = 28 Vdc, VD3A = VD3B = 45 Vdc, IDQ1 = 25 mA,

IDQ2 = 65 mA, IDQ3A = 75 mA, VG3B = (VBIAS – 2.05)[2] Vdc, Pout = 16 W Avg., 1 × 20 MHz LTE, f = 2000 MHz.

Characteristic

Symbol

Min

Typ

Max

Unit

VBW resonance point, 2-tone, 1 MHz tone spacing

(IMD third order intermodulation inflection point)

VBWres

—

460

—

MHz

Quiescent current accuracy over temperature[3]

with 2.2 kΩ gate feed resistors (–40 to 105°C)

Stage 1

with 2.2 kΩ gate feed resistors (–40 to 105°C)

Stage 2

∆

IQT

—

—

2.4

1.0

—

—

%

1-carrier 20 MHz LTE, 8 dB input signal PAR

Gain

G

—

49.1

—

dB

Power added efficiency

PAE

—

43.5

—

%

Adjacent channel power ratio

ACPR

—

–31.8

—

dBc

Adjacent channel power ratio

ALT1

—

–47.2

—

dBc

Adjacent channel power ratio

ALT2

—

–50.1

—

dBc

Gain flatness[4]

GF

—

1.7

—

dB

Pulsed CW, 10% duty cycle

Saturated power[5]

Psat

—

50.9

—

dBm

AM/PM @ saturated power[5]

Φ

—

–15.0

—

°

Gain variation @ Avg. power over temperature

(–40°C to +105°C)

∆

G

—

0.038

—

dB/°C

Output power variation @ saturated power over temperature[5]

(–40°C to +105°C)

∆

Psat

—

0.005

—

dB/°C

[1] All data measured with device soldered to NXP reference circuit.

[2] Increase VG3B (peaking side) until IDQ3B = 50 mA current is attained, and then subtract 2.05 V for final VG3B bias voltage.

[3] Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987,

Quiescent Current Control for the RF Integrated Circuit Device Family. Go to https://www.nxp.com/RF and search for

AN1977 or AN1987.

[4] Gain flatness = Max(G(fLow to fHigh)) – Min(G(fLow to fHigh)).

[5] Psat is defined at P3dB compression point.