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BAS70W Datenblatt(PDF) 5 Page - NXP Semiconductors

Teilenummer BAS70W
Bauteilbeschribung  General-purpose Schottky diodes
PDF  20 Pages
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAS70W Datenblatt(HTML) 5 Page - NXP Semiconductors

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BAS70_1PS7XSB70_SER_8
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 08 — 4 May 2006
5 of 20
Philips Semiconductors
BAS70 series; 1PS7xSB70 series
General-purpose Schottky diodes
4.
Marking
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5.
Limiting values
[1]
Tj =25 °C prior to surge.
Table 5.
Marking codes
Type number
Marking code[1]
Type number
Marking code[1]
1PS76SB70
S2
BAS70-05W
75*
1PS79SB70
G
BAS70-06
76*
BAS70
73*
BAS70-06W
76*
BAS70H
AH
BAS70-07
77*
BAS70L
S8
BAS70-07S
77*
BAS70W
73*
BAS70-07V
77
BAS70-04
74*
BAS70VV
N1
BAS70-04W
74*
BAS70XY
70*
BAS70-05
75*
-
-
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VR
reverse voltage
-
70
V
IF
forward current
-
70
mA
IFRM
repetitive peak forward
current
tp ≤ 1s; δ≤ 0.5
-
70
mA
IFSM
non-repetitive peak forward
current
tp ≤ 10 ms
[1] -
100
mA
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C



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