Internet Data Sheet

Rev.1.22, 2007-08

13

03292006-D7GM-ZBSS

HY[B/E]18L512320BF-7.5

512-Mbit Mobile-RAM

3

Electrical Characteristics

3.1

Operating Conditions

TABLE 10

Absolute Maximum Ratings

Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.Maximum ratings are

absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated

circuit.

TABLE 11

Pin Capacitances

Parameter

Symbol

Values

Unit

Min.

Max.

Power Supply Voltage

V

DD

-0.3

2.7

V

Power Supply Voltage for Output Buffer

V

DDQ

-0.3

2.7

V

Input Voltage

V

IN

-0.3

V

V

Output Voltage

V

OUT

-0.3

V

V

Operation Case Temperature

Commercial

T

C

0+70

°C

Extended

-25

+85

°C

Storage Temperature

T

STG

-55

+150

°C

Power Dissipation

P

D

–1.0

W

Short Circuit Output Current

I

OUT

–50

mA

Parameter

Symbol

Values

Unit

1) These values are not subject to production test but verified by device characterization.

2) Input capacitance is measured according to JEP147 with

V

should be in high impedance state.

Min.

Max.

Input capacitance: CLK

C

I1

3.0

6.0

pF

Input capacitance: all other input

C

I2

3.0

6.0

pF

Input/Output capacitance: DQ

C

IO

3.0

5.0

pF