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M40SZ100Y Datenblatt(PDF) 17 Page - STMicroelectronics

Teilenummer M40SZ100Y
Bauteilbeschribung  5V or 3V NVRAM supervisor for LPSRAM
PDF  25 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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M40SZ100Y, M40SZ100W
DC and AC parameters
17/25
Figure 11.
AC testing input/output waveforms
Table 6.
Capacitance
AI02568
0.8VCC
0.2VCC
0.7VCC
0.3VCC
Symbol
Parameter(1)(2)
1.
Sampled only, not 100% tested.
2.
At 25°C, f = 1MHz.
Min
Max
Unit
CIN
Input capacitance
7
pF
COUT
(3)
3.
Outputs deselected.
Output capacitance
10
pF
Table 7.
DC characteristics
Sym
Parameter
Test condition(1)
M40SZ100Y
M40SZ100W
Unit
Min
Typ
Max
Min
Typ
Max
ICC
Supply current
Outputs open
1
0.5
mA
ICCDR
Data retention mode
current(2)
50
200
50
200
nA
ILI
(3)
Input leakage current
0V
≤ VIN ≤ VCC
±1
±1
µA
Input leakage current
(PFI)
–25
2
25
–25
2
25
nA
ILO
(4)
Output leakage current
0V
≤ VOUT ≤ VCC
±1
±1
µA
IOUT1
(5) V
OUT current (active)
VOUT > VCC – 0.3
175
100
mA
IOUT2
VOUT current (battery
back-up)
VOUT > VBAT – 0.3
100
100
µA
VBAT
Battery voltage
2.5
3.0
3.5(6)
2.5
3.0
3.5(6)
V
VIH
Input high voltage
0.7VCC
VCC + 0.3
0.7VCC
VCC + 0.3
V
VIL
Input low voltage
–0.3
0.3VCC
–0.3
0.3VCC
V
VOH
Output high voltage(7)
IOH = –1.0mA
2.4
2.4
V
VOHB
VOH battery back-up
(8)
IOUT2 = –1.0µA
2.5
2.9
3.5
2.5
2.9
3.5
V
VOL
Output low voltage
IOL = 3.0mA
0.4
0.4
V
Output low voltage
(open drain)(9)
IOL = 10mA
0.4
0.4
V



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