| Datenblatt-Suchmaschine für elektronische Bauteile |
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M40SZ100Y Datenblatt(PDF) 18 Page - STMicroelectronics |
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M40SZ100Y Datenblatt(HTML) 18 Page - STMicroelectronics |
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18 / 25 page ![]() DC and AC parameters M40SZ100Y, M40SZ100W 18/25 VPFD Power-fail deselect voltage 4.20 4.4 0 4.50 2.55 2.60 2.70 V VPFI PFI input threshold VCC = 5V(Y) VCC = 3V(V) 1.225 1.2 50 1.275 1.225 1.25 0 1.275 V PFI hysteresis PFI rising 20 70 20 70 mV VSO Battery back-up switchover voltage 2.5 2.5 V 1. Valid for ambient operating temperature: TA = –40 to 85°C; VCC = 2.7 to 3.6V or 4.5 to 5.5V(except where noted). 2. Measured with VOUT and ECON open. 3. RSTIN internally pulled-up to VCC through 100kΩ resistor. 4. Outputs deselected. 5. External SRAM must match SUPERVISOR chip VCC specification (3V or 5V). 6. For rechargeable back-up, VBAT (max) may be considered VCC – 0.5V. 7. For PFO pin (CMOS). 8. Chip enable output (ECON) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage currents will reduce battery life. 9. For RST & BL pins (open drain). Table 7. DC characteristics (continued) Sym Parameter Test condition(1) M40SZ100Y M40SZ100W Unit Min Typ Max Min Typ Max |
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