Symbol

Alt

Parameter

Test Condition

M29F200T / M29F200B

Unit

-55

-70

High Speed

Interface

Standard

Interface

Min

Max

Min

Max

Address Valid to Next Address Valid

55

70

ns

Address Valid to Output Valid

55

70

ns

(1)

Chip Enable Low to Output Transition

00

ns

(2)

Chip Enable Low to Output Valid

55

70

ns

(1)

Output Enable Low to Output

Transition

00

ns

(2)

Output Enable Low to Output Valid

30

30

ns

Chip Enable High to Output

Transition

00

ns

(1)

Chip Enable High to Output Hi-Z

15

20

ns

Output Enable High to Output

Transition

00

ns

(1)

Output Enable High to Output Hi-Z

15

20

ns

Address Transition to Output

Transition

00

ns

(1,3)

RP Low to Read Mode

10

10

µs

RP High to Chip Enable Low

50

50

ns

RP Pulse Width

500

500

ns

Chip Enable to BYTE Switching Low

or High

55

ns

15

20

ns

30

30

ns

Notes: 1. Sampled only, not 100% tested.

3. To be considered only if the Reset pulse is given while the memory is in Erase or Program mode.

Table 14A. Read AC Characteristics

°C, –40 to 85°C or –40 to 125°C)

Erase Suspend (ES) Instruction. The Block

Erase operation may be suspended by this instruc-

tion which consists of writing the command B0h

without any specific address. No Coded cycles are

required. It permits reading of data from another

block and programming in another block while an

erase operation is in progress. Erase suspend is

accepted only during the Block Erase instruction

execution. Writing this command during Erase

timeout will, in addition to suspending the erase,

terminate the timeout. The Toggle bit DQ6 stops

togglingwhen the P/E.C. is suspended.The Toggle

bits will stop toggling between 0.1

µs and 15µs after

the Erase Suspend (ES) command has been writ-

ten. The device will then automatically be set to

Read Memory Array mode. When erase is sus-

pended, a Read from blocks being erased will

output DQ2 toggling and DQ6 at ’1’. A Read from

14/33

M29F200T, M29F200B