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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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M29F200 Datenblatt(PDF) 17 Page - STMicroelectronics |
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M29F200 Datenblatt(HTML) 17 Page - STMicroelectronics |
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17 / 33 page  Symbol Alt Parameter M29F200T / M29F200B Unit -55 -70 High Speed Interface Standard Interface Min Max Min Max tAVAV tWC Address Valid to Next Address Valid 55 70 ns tELWL tCS Chip Enable Low to Write Enable Low 0 0 ns tWLWH tWP Write Enable Low to Write Enable High 30 35 ns tDVWH tDS Input Valid to Write Enable High 25 30 ns tWHDX tDH Write Enable High to Input Transition 0 0 ns tWHEH tCH Write Enable High to Chip Enable High 0 0 ns tWHWL tWPH Write Enable High to Write Enable Low 20 20 ns tAVWL tAS Address Valid to Write Enable Low 0 0 ns tWLAX tAH Write Enable Low to Address Transition 45 45 ns tGHWL Output Enable High to Write Enable Low 0 0 ns tVCHEL tVCS VCC High to Chip Enable Low 50 50 µs tWHGL tOEH Write Enable High to Output Enable Low 0 0 ns tPHPHH (1,2) tVIDR RP Rise Time to VID 500 500 ns tPLPX tRP RP Pulse Width 500 500 ns tWHRL (1) tBUSY Program Erase Valid to RB Delay 30 30 ns tPHWL (1) tRSP RP High to Write Enable Low 4 4 µs Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. Table 15A. Write AC Characteristics, Write Enable Controlled (TA = 0 to 70 °C, –40 to 85°C or –40 to 125°C) POWER SUPPLY Power Up The memory Command Interface is reset on power up to Read Array. Either E or W must be tied to VIH during Power Up to allow maximum security and the possibility to write a command on the first rising edge of E and W. Any write cycle initiation is blocked when Vcc is below VLKO. Supply Rails Normal precautions must be taken for supply volt- age decoupling; each device in a system should have the VCC rail decoupled with a 0.1 µF capacitor close to the VCC and VSS pins. The PCB trace widths should be sufficient to carry the VCC pro- gram and erase currents required. 17/33 M29F200T, M29F200B |
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