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M29F200 Datenblatt(PDF) 23 Page - STMicroelectronics |
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M29F200 Datenblatt(HTML) 23 Page - STMicroelectronics |
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23 / 33 page ![]() Symbol Parameter M29F200T / M29F200B Unit -55 -70 High Speed Interface Standard Interface Min Max Min Max tWHQ7V Write Enable High to DQ7 Valid (Program, W Controlled) 10 2400 10 2400 µs Write Enable High to DQ7 Valid (Chip Erase, W Controlled) 1.0 30 1.0 30 sec tEHQ7V Chip Enable High to DQ7 Valid (Program, E Controlled) 10 2400 10 2400 µs Chip Enable High to DQ7 Valid (Chip Erase, E Controlled) 1.0 30 1.0 30 sec tQ7VQV Q7 Valid to Output Valid (Data Polling) 30 30 ns tWHQV Write Enable High to Output Valid (Program) 10 2400 10 2400 µs Write Enable High to Output Valid (Chip Erase) 1.0 30 1.0 30 sec tEHQV Chip Enable High to Output Valid (Program) 10 2400 10 2400 µs Chip Enable High to Output Valid (Chip Erase) 1.0 30 1.0 30 sec Note: 1. All other timings are defined in Read AC Characteristics table. Table 17A. Data Polling and Toggle Bit AC Characteristics (1) (TA = 0 to 70 °C, –40 to 85°C or –40 to 125°C) Symbol Parameter M29F200T / M29F200B Unit -90 -120 Standard Interface Standard Interface Min Max Min Max tWHQ7V Write Enable High to DQ7 Valid (Program, W Controlled) 10 2400 10 2400 µs Write Enable High to DQ7 Valid (Chip Erase, W Controlled) 1.0 30 1.0 30 sec tEHQ7V Chip Enable High to DQ7 Valid (Program, E Controlled) 10 2400 10 2400 µs Chip Enable High to DQ7 Valid (Chip Erase, E Controlled) 1.0 30 1.0 30 sec tQ7VQV Q7 Valid to Output Valid (Data Polling) 35 50 ns tWHQV Write Enable High to Output Valid (Program) 10 2400 10 2400 µs Write Enable High to Output Valid (Chip Erase) 1.0 30 1.0 30 sec tEHQV Chip Enable High to Output Valid (Program) 10 2400 10 2400 µs Chip Enable High to Output Valid (Chip Erase) 1.0 30 1.0 30 sec Note: 1. All other timings are defined in Read AC Characteristics table. Table 17B. Data Polling and Toggle Bit AC Characteristics (1) (TA = 0 to 70 °C, –40 to 85°C or –40 to 125°C) 23/33 M29F200T, M29F200B |
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