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TM124FBK32F Datenblatt(PDF) 5 Page - Texas Instruments

Teilenummer TM124FBK32F
Bauteilbeschribung  DYNAMIC RAM MODULE
PDF  9 Pages
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Hersteller  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
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TM124FBK32F Datenblatt(HTML) 5 Page - Texas Instruments

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TM124FBK32F, TM124FBK32U 1048576 BY 32-BIT DYNAMIC RAM MODULE
TM248GBK32F, TM248GBK32U 2097152 BY 32-BIT DYNAMIC RAM MODULE
SMMS660 – MARCH 1996
5
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS †
’248GBK32F - 60
’248GBK32F - 70
’248GBK32F - 80
UNIT
PARAMETER
TEST CONDITIONS †
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
VOH
High-level output
voltage
IOH = – 5 mA
2.4
2.4
2.4
V
VOL
Low-level output
voltage
IOL = 4.2 mA
0.4
0.4
0.4
V
II
Input current
(leakage)
VCC = 5.5 V,
VI = 0 V to 6.5 V,
All other pins = 0 V to VCC
± 10
± 10
± 10
µA
IO
Output current
(leakage)
VCC = 5.5 V,
VO = 0 V to VCC, CAS high
± 20
± 20
± 20
µA
ICC1
Read- or write-cycle
current (see Note 3)
VCC = 5.5 V,
Minimum cycle
384
364
344
mA
ICC2 Standby current
VIH = 2.4 V (TTL),
After one memory cycle,
RAS and CAS high
8
8
8
mA
ICC2 Standby current
VIH = VCC – 0.2 V (CMOS),
After one memory cycle,
RAS and CAS high
4
4
4
mA
ICC3
Average refresh
current (RAS only or
CBR)
(see Notes 3 and 5)
VCC = 5.5 V,
Minimum cycle,
RAS cycling,
CAS high (RAS only);
RAS low after CAS low (CBR)
760
720
680
mA
ICC4
Average EDO current
(see Note 4)
VCC = 5.5 V,
tPC = MIN,
RAS low,
CAS cycling
204
184
164
mA
† For test conditions shown as MIN / MAX, use the appropriate value specified under recommended operating conditions.
NOTES:
3. Measured with a maximum of one address change while RAS = VIL
4. Measured with a maximum of one address change while CAS = VIH
5. Measured with both sides in CBR cycle
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz (see Note 6)
PARAMETER
’124FBK32F
’248GBK32F
UNIT
PARAMETER
MIN
MAX
MIN
MAX
UNIT
Ci(A)
Input capacitance, A0 – A9
12
22
pF
Ci(R)
Input capacitance, RAS inputs
8
8
pF
Ci(C)
Input capacitance, CAS inputs
8
15
pF
Ci(W)
Input capacitance, W
16
30
pF
Co(DQ) Output capacitance on DQ0 – DQ31
8
15
pF
NOTE 6: VCC = 5 V ± 0.5 V, and the bias on pins under test is 0 V.



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