STW82102B datasheet(1/67 Pages) STMICROELECTRONICS

Teilenummer	STW82102B

Bauteilbeschribung	RF down converter with embedded integer-N synthesizer

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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1 / 67 page

This is information on a product in full production.

March 2012

Doc ID 018516 Rev 2

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1

STW82102B

RF down converter with embedded integer-N synthesizer

Datasheet

−production data

Features

■ High linearity:

– IIP3: +25.5 dBm

– 2FRF-2FLO spurious rejection: 85 dBc

■ Noise figure:

– NF: 10.5 dB

■ Conversion gain

– CG: 8 dB

■ RF range: 1425 MHz to 1910 MHz

■ Wide IF amplifier frequency range: 70 MHz to

400 MHz

■ Integrated RF balun with internal matching

■ Dual differential integrated VCOs with

automatic center frequency calibration:

– LOA: 1500 to 1800 MHz

– LOB: 1900 to 2200 MHz

■ Embedded integer-N synthesizer

– Dual modulus programmable prescaler

(16/17 or 19/20)

– Programmable reference frequency divider

(10 bits)

– Adjustable charge pump current

– Digital lock detector

– Excellent integrated phase noise

– Fast lock time: 150 µs

■ Integrated DAC with dual current output

■ Supply: 3.3 V and 5 V analog,

3.3 V Digital

■ Dual digital bus interface: SPI and I2C bus (fast

mode) with 3 bit programmable address

(1101A2A1A0)

■ Process: 0.35 µm BICMOS SiGe

■ Operating temperature range -40 to +85oC

■ 44-lead exposed pad VFQFPN package

7x7x1.0 mm

Applications

■ Cellular infrastructure equipment:

– IF sampling receivers

– Digital PA linearization loops

■ Other wireless communication systems.

Description

The STMicroelectronics STW82102B is an

integrated down converter providing 8 dB of gain,

10.5 dB NF, and a very high input linearity by

means of its passive mixer.

Embedding two wide band auto calibrating VCOs

and an integer-N synthesizer, the STW82102B is

suitable for both Rx and Tx requirements for

cellular infrastructure equipment.

The integrated RF balun and internal matching

permit direct 50 ohm single-ended interface to RF

port. The IF output is suitable for driving 200-ohm

impedance filters.

By embedding a DAC with dual current output to

drive an external PIN diode attenuator, the

STW82102B replaces several costly discrete

components and offers a significant footprint

reduction.

The STW82102B device is designed with

STMicroelectronics advanced 0.35 µm

SiGe process. Its performance is specified over a

-40 °C to +85 °C temperature range.

Table 1.

Device summary

Part number

Package

Packaging

STW82102B

VFQFPN-44

Tray

STW82102BTR

VFQFPN-44

Tape and reel

VFQFPN-44

www.st.com

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