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STP18NM80 Datenblatt(PDF) 1 Page - STMicroelectronics

Teilenummer STP18NM80
Bauteilbeschribung  N-channel 800 V, 0.25 Ω, 17 A, MDmes Power MOSFET
PDF  21 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP18NM80 Datenblatt(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
May 2012
Doc ID 15421 Rev 5
1/21
21
STB18NM80, STF18NM80,
STP18NM80, STW18NM80
N-channel 800 V, 0.25
Ω, 17 A, MDmesh™ Power MOSFET
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet — production data
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
These N-channel Power MOSFETs are
developed using STMicroelectronics’
revolutionary MDmesh™ technology, which
associates the multiple drain process with the
company's PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance,
high dv/dt and excellent avalanche
characteristics. Utilizing ST’s proprietary strip
technique, these Power MOSFETs boast an
overall dynamic performance which is superior to
similar products on the market.
Figure 1.
Internal schematic diagram
Order codes
VDSS
RDS(on)
max
ID
STB18NM80
800 V
< 0.295
Ω
17 A
STF18NM80
800 V
< 0.295
Ω 17 A (1)
1.
Limited only by maximum temperature allowed
STP18NM80
800 V
< 0.295
Ω
17 A
STW18NM80
800 V
< 0.295
Ω
17 A
TO-220
D²PAK
TO-247
1
2
3
1
2
3
TO-220FP
1
3
1
2
3
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB18NM80
18NM80
D²PAK
Tape and reel
STF18NM80
TO-220FP
Tube
STP18NM80
TO-220
STW18NM80
TO-247
www.st.com


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