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STTH30W02C Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STTH30W02C
Bauteilbeschribung  Turbo 2 ultrafast high voltage rectifier
PDF  8 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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STTH30W02C Datenblatt(HTML) 2 Page - STMicroelectronics

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Characteristics
STTH30W02C
2/8
Doc ID 023273 Rev 1
1
Characteristics
When diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 0.8 x IF(AV) + 0.0167 IF
2
(RMS)
Table 2.
Absolute ratings (limiting values, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
200
V
IF(RMS) Forward rms current
30
A
IF(AV)
Average forward current,
 = 0.5
Tc = 125 °C
Per diode
15
A
Tc = 115°C
Per device
30
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
140
A
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature
+ 175
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
2.5
°C / W
Total
1.5
Rth(c)
Coupling
0.5
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms,  < 2%
Reverse leakage current
Tj = 25 °C
VR = VRRM
10
µA
Tj = 125 °C
5
50
VF
(2)
2.
Pulse test: tp = 380 µs,  < 2%
Forward voltage drop
Tj = 25 °C
IF = 15A
1.20
V
Tj = 150 °C
0.90
1.05
Tj = 25 °C
IF = 30 A
1.4
Tj = 150 °C
1.1
1.3



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