STTH30W02C datasheet(3/8 Pages) STMICROELECTRONICS

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STTH30W02C

Characteristics

Doc ID 023273 Rev 1

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Table 5.

Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IRM

Reverse recovery current

Tj = 125 °C

IF = 15 A, VR = 160 V

dIF/dt = -200 A/µs

QRR

Reverse recovery charge

160

Sfactor

Softness factor

0.3

trr

Reverse recovery time

Tj = 25 °C

IF = 1 A, VR = 30 V

dIF/dt = -100 A/µs

tfr

Forward recovery time

Tj = 25 °C

IF = 15 A, VFR = 1.1 V

dIF/dt = 100 A/µs

200

VFP

Forward recovery voltage

Tj = 25 °C

1.6

2.4

Figure 1.

Average forward power dissipation

versus average forward current

(per diode)

Figure 2.

Forward voltage drop versus

forward current (per diode)

(W)

F(AV)

= tp/T

IF(AV)(A)

δ = 0.05 δ1

= 0.

δ = 0.2

δ = 0.5

δ = 1

FM(A)

0.1

1.0

10.0

100.0

1000.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Tj=150 °C

(Typical values)

Tj=150°C

(Maximum values)

Tj = 25 °C

(Maximum values)

VFM(V)

Figure 3.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 4.

Peak reverse recovery current

versus dIF/dt (typical values, per

diode)

Zth(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp(s)

100

150

200

250

300

350

400

450

500

IRM(A)

I F = IF(AV)

VR = 160 V

Tj =125 °C

dIF/dt(A/µs)

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