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IO10PDB0V0 Datenblatt(PDF) 74 Page - Microsemi Corporation

Teilenummer IO10PDB0V0
Bauteilbeschribung  SmartFusion Customizable System-on-Chip (cSoC)
PDF  197 Pages
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Hersteller  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

IO10PDB0V0 Datenblatt(HTML) 74 Page - Microsemi Corporation

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SmartFusion DC and Switching Characteristics
2- 62
R e v i sio n 1 2
Main and Lower Power Crystal Oscillator
The tables below describes the electrical characteristics of the main and low power crystal oscillator.
Table 2-84 • Electrical Characteristics of the Main Crystal Oscillator
Parameter
Description
Condition
Min.
Typ.
Max.
Units
Operating frequency
Using external crystal
0.032
20
MHz
Using ceramic resonator
0.5
8
MHz
Using RC Network
0.032
4
MHz
Output duty cycle
50
%
Output jitter
With 10 MHz crystal
1
ns RMS
IDYNXTAL
Operating current
RC
0.6
mA
0.032–0.2
0.6
mA
0.2–2.0
0.6
mA
2.0–20.0
0.6
mA
ISTBXTAL
Standby current of crystal oscillator
10
µA
PSRRXTAL Power supply noise tolerance
0.5
Vp-p
VIHXTAL
Input logic level High
90%
of
VCC
V
VILXTAL
Input logic level Low
10%
of
VCC
V
Startup time
RC [Tested at 3.24Mhz]
300
550
µs
0.032–0.2 [Tested at 32KHz]
500
3,000
µs
0.2–2.0 [Tested at 2MHz]
8
12
µs
2.0–20.0 [Tested at 20MHz]
160
180
µs
Table 2-85 • Electrical Characteristics of the Low Power Oscillator
Parameter
Description
Condition
Min.
Typ.
Max.
Units
Operating frequency
32
KHz
Output duty cycle
50
%
Output jitter
30
ns RMS
IDYNXTAL Operating current
32 KHz
10
µA
ISTBXTAL Standby current of crystal oscillator
2
µA
PSRRXTAL Power supply noise tolerance
0.5
Vp-p
VIHXTAL
Input logic level High
90% of VCC
V
VILXTAL
Input logic level Low
10% of VCC
V
Startup time
Test load used: 20 pF
2.5
s
Test load used: 30 pF
3.7
13
s



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