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STF100N10F7 Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STF100N10F7
Bauteilbeschribung  N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET™ VII DeepGATE™ Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220
PDF  23 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF100N10F7 Datenblatt(HTML) 3 Page - STMicroelectronics

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DocID023737 Rev 4
3/23
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
DPAK
TO-220FP
TO-220
D2PAK
V
DS
Drain-source voltage
100
V
V
GS
Gate-source voltage
± 20
V
I
D
Drain current (continuous) at T
C
= 25 °C
80
45
(1)
1.
This value is limited by package.
.
80
A
I
D
Drain current (continuous) at T
C
= 100 °C
62
32
(1)
70
A
I
DM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
320
180
320
A
P
TOT
(1)
Total dissipation at T
C
= 25 °C
120
30
150
W
T
J
Operating junction temperature
-55 to 175
°C
T
stg
Storage temperature
°C
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
D2PAK
DPAK
TO-220FP
TO-220
R
thj-case
Thermal resistance junction-case
1
1.25
5
1
°C/W
R
thj-amb
Thermal resistance junction-
ambient
62.50
°C/W
R
thj-pcb
(1)
1.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Thermal resistance junction-pcb
30
50
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
E
AS
Single pulse avalanche energy
(T
J
= 25 °C, L = 3.5 mH, I
AS
= 15 A, V
DD
= 50 V, V
GS
= 10 V)
400
mJ



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