STF100N10F7 datasheet(4/23 Pages) STMICROELECTRONICS

Teilenummer	STF100N10F7

Bauteilbeschribung	N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET™ VII DeepGATE™ Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220

PDF	23 Pages

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Electrical characteristics

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7

4/23

DocID023737 Rev 4

Electrical characteristics

CASE

=25 °C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(BR)DSS

Drain-source breakdown

voltage (V

= 0)

= 250 μA

100

DSS

Zero gate voltage drain

current (V

= 0)

= 100 V

= 100 V; T

=125 °C

100

μA

GSS

Gate body leakage current

= 0)

= 20 V

100

GS(th)

Gate threshold voltage

= V

, I

= 250 μA2.5

4.5

DS(on)

Static drain-source on-

resistance

For D

PAK, DPAK and

TO-220

= 10 V, I

= 40 A

For TO-220-FP

= 10 V, I

= 22.5 A

0.0068

0.008

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

iss

Input capacitance

=50 V, f=1 MHz,

4369

oss

Output capacitance

823

rss

Reverse transfer

capacitance

-36

Total gate charge

=50 V, I

= 80 A

=10 V

Figure 18

-61

Gate-source charge

Gate-drain charge

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

d(on)

Turn-on delay time

=50 V, I

= 40 A,

=4.7

Ω, V

= 10 V

Figure 17

-27

Rise time

d(off)

Turn-off delay time

Fall time

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