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STF100N10F7 Datenblatt(PDF) 5 Page - STMicroelectronics

Teilenummer STF100N10F7
Bauteilbeschribung  N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET™ VII DeepGATE™ Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220
PDF  23 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF100N10F7 Datenblatt(HTML) 5 Page - STMicroelectronics

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DocID023737 Rev 4
5/23
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
I
SD
Source-drain current
-
80
A
I
SDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
320
A
V
SD
(2)
2.
Pulsed: pulse duration=300 μs, duty cycle 1.5%
Forward on voltage
I
SD
= 80 A, V
GS
=0
-
1.2
V
t
rr
Reverse recovery time
I
SD
= 80 A,
di/dt = 100 A/μs,
V
DD
=80 V, T
j
=150 °C
-77
ns
Q
rr
Reverse recovery charge
-
146
nC
I
RRM
Reverse recovery current
-
4
A



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